Similar Posts
Surfactants tested to reduce agglomeration between IgG and 20 nm fluospheres
Mary Lee and I performed a quick test to determine the efficacy of different surfactants at reducing agglomeration between IgG and 20 nm fluospheres. Each solution is a combination of 50 uL 10 mg/mL IgG (in PBS) + 50 uL 20 nm red Invitrogen fluospheres + 500 uL of surfactant. We used 1 x PBS…
Anodic Bonding Vincent’s Chip Stack
Previous posts: Anodic Bonding Theory, Anodic Bonding Setup I had originally hoped there would be enough residual impurity in the oxide layer to create a direct bond with Vincent’s chips. This was a foolish hope. Pyrex is at least 4-5% doping and standard p-doped silicon wafers are 5-6 orders of magnitude less than that, with…
H2O2 crosses "nonporous" membranes
A couple weeks ago, I showed some preliminary data on H2O2 detection via the Amplex Red Assay, which is a project for one of our high school students. This generated some discussion at the last NRG meeting about diffusion through “nonporous” membranes. Jess wanted to look at very small molecule diffusion in her set-up so…
Cross-chip resistances for SiN chips coated in Ag and Al2O3
In my continuing efforts (previous post) to create a nanofluidic transistor, I recently repeated some of my earlier attempts to prototype a basic Si-Ag-Al2O3 stack. This time, however, I used SiN chips from wafer #1070 (<40 nm>). As before, I aimed for a ~3 nm Ti adhesion layer (4.3 nm actually) and a 12 nm…
DNA Filtration at New NaCl Concentrations and New Salt Types (LiCl and CsCl)
I ran new experiments over the weekend in which I tested NaCl at 10, 25, 60, and 155mM. I also ran filtrations in the presence of 10mM LiCl and 10mM CsCl. These experiments were performed with chips from wafer # 024. I am only providing the Filtrate / Retentate ratios. It is obvious that the…
Five-layer structure
ByJoe QiIn this post, two unique five-layer structures will be discussed. The first five-layer structure is nitride/oxide/silicon/oxide/nitride (NOSON) with the deposition order from bottom to top. In this structure, the silicon film is 25nm while the nitride and oxide are both 15nm. After etching the substrate, the membrane was RTP annealed at 1000C for 1 minute….
