Vapor based PEG deposition
This paper talks about PEG monolayer deposition using CVD. Here is the link for Ultrathin Poly(ethylene glycol) Monolayers Formed by Chemical Vapor Deposition on Silicon Substrates
This paper talks about PEG monolayer deposition using CVD. Here is the link for Ultrathin Poly(ethylene glycol) Monolayers Formed by Chemical Vapor Deposition on Silicon Substrates
My goal and focus of the last post is to to use the existing SU-8 grid structure used on the ultrathin silicon oxide lift off membranes to create . To accomplish the goal the SU-8 surface needs to be modied to decrease cell adhesion so that the cells are trapped in the wells. Please see…
I attended the 2014 Gordon Research Conference (GRC) on Fuel Cells in August. For those of you not familiar with Gordon conferences, I will make a plug for them as a great venue for learning much detail and interacting closely with many of the major contributors in a specific field. GRC has a wide variety…
As I mentioned in my previous post, there are a lot of problems associated with the technique for testing the ability of a CytoVu assembly to act as an assay that I had been trying to use before. Several possible sources of error were apparent, such as the difficulty inherent in consistently pipetting such small…
In this post, two unique five-layer structures will be discussed. The first five-layer structure is nitride/oxide/silicon/oxide/nitride (NOSON) with the deposition order from bottom to top. In this structure, the silicon film is 25nm while the nitride and oxide are both 15nm. After etching the substrate, the membrane was RTP annealed at 1000C for 1 minute….
Hi everyone, this is a short post quickly detailing some interesting quirks of different wafers as their respective chips are subjected to a control experiment (1x PBS, Qs = 30 ul/min, Qu= 10% Qs every 45 minutes). First, lets look at 1256 (2.7% porosity, avg. pore diameter 33.2 nm). These results are a nice baseline…
The Cambridge Microsystems Savannah 200 atomic layer deposition (ALD) system uses a two-step chemical process that alternates pulses of water vapor and trimethylaluminum (TMA) to build a layer of Al2O3 on a silicon substate. Because of the two-step nature of the process, the film is forced to grow by successive monolayers, each with a thickness…