Pores in 60 nm pnc-Si

We deposited a 20/60/20 nm OSO stack for an ellipsometry test.  We decided to try annealing the un-patterned wafer in the RTP at 1050 C with no susceptor with a 100 C/s ramp for 60 s.

The attached SEM images show pores forming.  With these encouraging results, we are considering depositing 40, 50 and 60 nm thick a-Si on patterned wafers to re-investigate pore formation taking advantage of all of the latest advances in processing.

 

20-60-20 1050c1 20-60-20 1050c2 20-60-20 1050c4 20-60-20_xs_0 20-60-20_xs_1

 

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