SiO2 evaporation at RIT
Today Barrett and I processed SiO2 deposition at RIT. This process was actually delayed due to the cleanroom scrubber failure last week.
We deposited 30nm SiO2 on both sides of three wafers, #335, 341, and 345. Earlier in March, I tried 20nm and 40nm SiO2. It was found that 40nm SiO2 is so thick that the pores are no longer open after deposition. Therefore, this time we tried 30nm.
The wafers are now with Barrett. We can try to RTP some of these samples, and compare the difference in stabilities.
Annealing these wafers would be a good idea, given the low quality of evaporated SiO2. Are there any results yet on the stability in media? Are the membranes wrinkled at all?
Stability results are coming (hopefully later today).
The membranes are wrinkled, although I don’t know what they looked like before we did the evaporation. They weren’t in great shape before the deposition. Lingyun, did you look at these wafers before we went to RIT?